Abstract
FeCo films of the type used in spin transfer torque magnetoresistive random access memory were etched by gas cluster ion beam (GCIB) irradiation with acetic acid vapor and characterized by in situ X-ray photoelectron spectroscopy. After 20 keV O2-GCIB irradiation with acetic acid vapor, etching depth enhancement (10.7×) was observed compared with the results without acetic acid vapor. The etching model of FeCo can be described as follows: (1) FeCo oxide formation with O2-GCIB irradiation, (2) acetic acid adsorption on FeCo oxide, (3) reactions between FeCo oxide and acetic acid, and (4) the desorption of volatile compounds by local and transient heating owing to O2-GCIB bombardment. Cross-sectional transmission electron microscopy, transmission electron diffraction analysis, and electron energy loss spectroscopy results showed no significant etching damage or oxidation of FeCo films after etching by O2-GCIB irradiation with acetic acid vapor. Therefore, the low-damage etching of FeCo can be performed by O2-GCIB irradiation with acetic acid vapor.
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