Abstract
Vapor phase cleaning of Si(100) surface in a cluster tool was studied. Electrical properties of the interface and the integrity of 55 Å films formed by in situ pregate oxide cleaning and rapid thermal oxidation (RTO) were characterized. Pregate oxide cleaning included anhydrous hydrofluoride (AHF) vapor for etching of native or sacrificial oxide, hydrocarbon removal, and trace metallic contamination elimination. Compared with a conventional wet cleaning procedure, in situ cleaning results in an equivalent interface and film with higher charge‐to‐breakdown . A two‐step cleaning procedure consisting of AHF etching and metal removal results in oxides with the highest .
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
