Abstract
The characteristics of 20 /spl Aring/ gate oxide formed by an RTO (Rapid Thermal Oxidation) process with an NO+O/sub 2/ mixture ambient have been investigated. Due to the high nitrogen concentration in the oxide, good boron penetration suppression and higher interface trap density were observed. The low thermal cycle of the RTO process facilitated the formation of SSR (Super Steep Retrograde) channel and reduced RSCE (Reverse Short Channel Effect). The transistor performance was Idsat n/p=925/370 /spl mu/A//spl mu/m for Vdd=1.5 V and Idoff n/p=10 nA//spl mu/m. The TDDB and hot carrier characteristics were evaluated and found to be satisfactory.
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