Abstract
In this work, a zinc nitride (ZnN) film was deposited at room temperature and subjected to pulse-mode rapid thermal oxidation. The physical and chemical structures of ZnN film were changed during the rapid thermal oxidation process. The presence of zinc-oxygen bonds in the oxidized ZnN film indicated that some nitrogen atoms within the ZnN film are replaced by oxygen atoms. Through the rapid thermal oxidation process, ZnN was converted into a zinc oxide material containing nitrogen atoms. The oxidized ZnN possessed more acceptor states than donor states, which resulted in p-type conduction. The carrier concentration, mobility, and resistivity of the rapid-thermal-oxidized ZnN were 6.49 × 1018 cm−3, 12.9 cm2 V−1 s−1 and 0.7 Ω cm, respectively.
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