Abstract
An in situ time-resolved optical reflection and transmission (TRORT) monitoring system combining two He–Ne probe lasers, a digital oscilloscope and three fast photodetectors is developed to investigate the crystallization processes of Si thin films during excimer laser crystallization (ELC). The physical meaning of optical spectra obtained by TRORT measurements has been interpreted in detail. The melt duration and transient phase transformation dynamics of Si thin films can be determined and interpreted immediately. A high efficiency and non-destructive evaluation approach is proposed for determining the grain size of polycrystalline Si after ELC directly and immediacy under appropriate experimental conditions.
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