In situ thermal behavior of resistance drift in GeTe and Ge2Sb2Te5 nanowires via Raman thermometry

Sungjin Park, Dambi Park + Show 4 more

https://doi.org/10.1039/d0tc00781a

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Journal: Journal of Materials Chemistry C	Publication Date: Jan 1, 2020
Citations: 3

Abstract

The time-dependent resistance drift in GeTe and Ge2Sb2Te5 (GST) nanowires is investigated via Raman thermometry.

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