Abstract
The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that the combination of Raman thermometry and scanning thermal microscopy (SThM) can enable such measurements with high spatial resolution. We report temperature-dependent Raman spectra of HfO2, TiO2 and Ge2Sb2Te5 (GST) films, and demonstrate direct measurements of temperature profiles in lateral PCM devices. Our measurements reveal that electrical and thermal interfaces dominate the operation of such devices, uncovering a thermal boundary resistance of 28 ± 8 m2K/GW at GST-SiO2 interfaces and an effective thermopower 350 ± 50 µV/K at GST-Pt interfaces. We also discuss possible pathways to apply Raman thermometry and SThM techniques to nanoscale and vertical resistive memory devices.
Highlights
The operation of resistive and phase-change memory (RRAM and phase change memory (PCM)) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry
We show that the combination of Raman thermometry and scanning thermal microscopy (SThM) can enable such measurements with high spatial resolution
We show an experimental measurement of the temperature profile in a Joule-heated PCM device, providing important insights into its operation
Summary
EilamYalon 1, Sanchit Deshmukh[1], Miguel Muñoz Rojo 1, Feifei Lian[1], Christopher M. The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. We combine Raman thermometry and scanning thermal microscopy (SThM) to measure the spatially resolved temperature rise in resistive memory devices. This powerful combination of temperature mapping techniques has been previously used on GaN nanowires[18], but it is applied here to resistive memory devices for the first time. We discuss how Raman and SThM can be used to measure the local temperature rise in vertical and other nanoscale RRAM and PCM device geometries
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