Abstract
Molecular beam epitaxy (MBE) is an ideal technique for in situ studies of the growth mechanisms of thin films and other low-dimensional structures. There is an ultra-high-vacuum (UHV) environment, so it is compatible with many surface-science techniques, and the incident fluxes can be very accurately controlled. In this paper, I will summarize the application of reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM) to the homoepitaxial growth of GaAs (0 0 1) films and the growth of InAs on low-index orientation GaAs substrates. I will emphasize the importance of establishing an interpretation that is consistent with results from both methods and also demonstrate the necessity of combining the experimental approach with theoretical treatments, both simulation and analytical.
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