Abstract
Many properties of materials can be changed by varying the interatomic distances in the crystal lattice by applying stress. Ideal model systems for investigations are heteroepitaxial thin films where lattice distortions can be induced by the crystallographic mismatch with the substrate. Here we describe an in situ simultaneous diagnostic of growth mode and stress during pulsed laser deposition of oxide thin films. The stress state and evolution up to the relaxation onset are monitored during the growth of oxygen ion conducting Ce0.85Sm0.15O2-δ thin films via optical wafer curvature measurements. Increasing tensile stress lowers the activation energy for charge transport and a thorough characterization of stress and morphology allows quantifying this effect using samples with the conductive properties of single crystals. The combined in situ application of optical deflectometry and electron diffraction provides an invaluable tool for strain engineering in Materials Science to fabricate novel devices with intriguing functionalities.
Highlights
This page was generated automatically upon download from the ETH Zurich Research Collection
Ideal model systems for investigations are heteroepitaxial thin films where lattice distortions can be induced by the crystallographic mismatch with the substrate
We describe an in situ simultaneous diagnostic of growth mode and stress during pulsed laser deposition of oxide thin films
Summary
This page was generated automatically upon download from the ETH Zurich Research Collection. We describe an in situ simultaneous diagnostic of growth mode and stress during pulsed laser deposition of oxide thin films. Stress-induced lattice distortions, that is, a tensile or compressive strain of the crystal structure, can significantly influence the physicochemical characteristics of materials by enhancing/inhibiting specific properties or by enabling new functionalities not allowed in the unperturbed structure. Literature concerning the in situ diagnostic of stress/strain generation and evolution during the epitaxial growth of oxide films is scarce. We address this topic measuring simultaneously in situ the stress with a multi-beam optical stress sensor (MOSS) and the growth mode by reflection high-energy electron diffraction (RHEED) during pulsed laser deposition (PLD)
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