Abstract
Using an integrated fabrication facility consisting of molecular beam epitaxial growth chambers, a Ga + focused ion beam lithography system and an ultra-high vacuum scanning tunnelling microscope, we have studied, in situ, the interaction of high energy Ga + ions with the GaAs(1 0 0) surface. The ion beam dose was such that significant sputtering did not occur, but surface state changes were induced as observed with scanning tunnelling spectroscopy. We spatially identified electron traps induced in the surface state band gap as a result of ion beam irradiation, and also observed variations in their concentration in the ion beam profile. Nanometre scale regions were observed where monolayer sputtering had occurred, with the exposed layer taking on a c(4 x 4) surface reconstruction, as opposed to the (2 x 4) surface reconstruction of the un-irradiated surface.
Published Version
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