Abstract
In situ spectrum measurement by surface photo-absorption (SPA) is applied to study the Ga deposition process on (001) GaAs in metal-organic chemical vapor deposition (MOCVD). The change in SPA spectra is measured in the wavelength range from 300 nm to 800 nm, when triethylgallium is supplied on As-stabilized surface. The change at 470 nm is caused by the disappearance of the uppermost As dimer of c(4×4) surface followed by the appearance of a(2×4) As dimer domain or the formation of Ga-As back bonds. A broad spectrum from 500 nm to 800 nm is observed after one-monolayer Ga deposition, implying a correlation with Ga droplet formation. The calculated spectrum supports this broad spectrum being due to the photo-absorption by free Ga atoms on Ga-stabilized surface or metallic Ga atoms included in droplets.
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