Abstract
GaAs growth process is investigated by in situ optical methods during metalorganic chemical vapor deposition. Formation and annihilation of Ga droplets are observed on GaAs surface, using surface photo-absorption and scattered light observations. When triethylgallium is supplied in excess of one Ga atomic layer coverage to the As-stabilized surface, the scattered light is observed after the saturation of reflectivity due to surface photo-absorption, indicating Ga droplet formation on the surface. AsH3 supply to the surface with Ga droplets results in the annihilation of these droplets followed by the formation of the As-stabilized surface. These are observed, respectively, from the decay of scattered light intensity and subsequent decay of reflectivity of the surface photo-absorption.
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