Abstract
A scanning reflection electron microscopy-total reflection angle X-ray spectroscopy (SREMTRAXS) system has been newly developed for in situ monitoring of the crystal structure and the chemical composition of film surfaces during molecular beam epitaxy. In this system, the primary electron beam from the microprobe reflection high energy electron diffraction gun is focused on the sample down to below 1 μm in diameter. The SREM image and TRAXS image are simultaneously obtained by monitoring the diffraction spot intensity on the fluorescent screen and by detecting the X-rays emitted from the sample at the critical angle for total reflection respectively. The surfaces of InAs films on GaAs substrates grown under various conditions were observed in situ with this system. The take-off angle dependence of the characteristic X-ray intensity was closely related to the surface morphology of the grown film observed with this system.
Published Version
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