Abstract
A new LEC GaAs crystal growth monitoring system for in-situ real-time observation of the shape of the meniscus and the solid-liquid interface has been developed using an X-ray image processing technique. The system consists of an in-house modified high pressure puller and X-ray imaging apparatus linked to a real-time image processor which supresses the background noise and enhances the X-ray image. The relationship between the shape of the meniscus and crystallinity was investigated in the seeding procedure. The region of stable crystal growth is indicated by a meniscus angle in the range 18° to 45°.
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