In situ observation and numerical analysis of temperature gradient effects on growth velocity during directional solidification of silicon

Abstract

AbstractThe < 110 > directional solidification of silicon under varying overall temperature gradients was investigated using an in situ observation system. The growth velocity of an atomically rough interface was found to decrease with increasing temperature gradient. A theoretical model of the thermal field taking undercooling into account was developed to describe this phenomenon and was demonstrated to be valid. The results of this work indicate that the reported linear relationship between growth velocity (V) and undercooling (ΔT), given by V (mm s−1) = 120ΔT (K), is most accurate in the case of a rough interface. In the case that the overall temperature gradient is small, the melting point isotherm moves rapidly such that it becomes more difficult for the interface to keep pace with the isotherm compared with a large temperature gradient. This effect leads to increased undercooling at the interface and consequently a rapid growth velocity. Thermal field calculations confirm that a rapid increase in the ratio of the temperature gradient in the crystal to that in the melt should increase the latent heat release, again providing a more rapid growth velocity.