Abstract
ABSTRACTThe reversible photostriction (photomechanical strain) in Ge35S65 chalcogenide thin film deposited by a solvent casting method has been monitored using a fiber Bragg grating (FBG) sensor. The shift in Bragg wavelength is used as a probing parameter to quantitatively measure the photoinduced strain arising because of structural modifications in these films under illumination. Exposure to band gap light (405 nm) and above band gap light (302 and 254 nm) leads to a reversible photostriction effect of the order of 100 µε. The present study shows that FBG sensors can be used to effectively measure the optomechanical actuation in chalcogenide films caused by the reversible photostriction effect in the visible and ultraviolet wavelength region.
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