Abstract
The morphology of the side surface of floating-zone (FZ) single crystal silicon ingots with diameters up to 125 mm grown in the [111] direction on an FZ-20 (Haldor Topse) puller have been studied. The geometry and morphology of ridgelike protrusions (RPs) most frequently observed on the FZ-grown [111]-oriented Si ingots are described for the first time. Analysis of these data allowed RPs corresponding to the octahedral and rhombododecahedral growth habit to be identified among the variety of protrusions. The critical ingot diameters are established, above which the rhombododecahedral RPs appear on dislocation-free crystal ingots. The presence of such RPs can be used for in situ monitoring of the structural state of FZ silicon.
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