Abstract
Hydrogen gas evolved during anodization of silicon in a hydrofluoric acid solution is an indicator which allows us to gain information about the nanostructure of porous silicon. The time dependence of the amount of hydrogen gas has been measured. In addition to this result, using a quantitative relationship obtained from both an anodization reaction formula and a crystallographic model of the pore in the silicon crystal, the time dependence of the diameter of nanopores in porous silicon has been measured in real time. The growth process of nanopores during anodization is revealed. Based on the results, the growth mechanism of the pore was deduced. © 2004 The Electrochemical Society. All rights reserved.
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