Abstract
A model is presented to interpret in situ laser reflectance interferometry (LRI) measurements of film growth. The model uses no adjustable parameters and measures film thickness, growth rate, attenuation, and root-mean-square (rms) surface roughness in situ and in real time. For the particular case of diamond film growth on silicon substrates, it is shown that the assumptions of the model are satisfied, and that film properties determined in situ by LRI and by various means ex situ are in good agreement. With this model, the evolution of diamond film properties are followed under typical diamond growth conditions using mixtures of CH4 and H2. In agreement with texture formation models, the growth rate and surface roughness were observed to increase as film growth progressed. The growth rate was found to be proportional to CH4 fraction for CH4 fractions less than 8.5%. At higher CH4 fractions, the growth rate decreased and significant attenuation was observed.
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