Abstract
AbstractThe role of helium on the microstructural evolution of V-3.8Cr-3.9Ti has been investigated by in-situ transmission electron microscopy observations of as-prepared and He implanted (<10 appm) samples subjected to 200keV He irradiation at room temperature. Quantitative analysis of the defects showed an increase in the defect density and size with irradiation in both types of samples. The unimplanted sample showed a defect density consistent with electron irradiation experiments. In comparison, the He preimplanted sample had slightly larger defects and a substantially greater increase in the number density of defects. This result is consistent with a mechanism of He trapping by the formation of He-vacancy-X (X= C, N, O) complexes.
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