Abstract
In-situ iodine (I2)-doped atmospheric pressure (AP) plasma polymerization is proposed, based on a newly designed AP plasma reactor with a single wire electrode that enables low-voltage-driven plasma polymerization. The proposed AP plasma reactor can proceed plasma polymerization at low voltage levels, thereby enabling an effective in-situ I2 doping process by maintaining a stable glow discharge state even if the applied voltage increases due to the use of a discharge gas containing a large amount of monomer vapors and doping materials. The results of field-emission scanning electron microscopy (FE-SEM) and Fourier transformation infrared spectroscopy (FT-IR) show that the polyaniline (PANI) films are successfully deposited on the silicon (Si) substrates, and that the crosslinking pattern of the synthesized nanoparticles is predominantly vertically aligned. In addition, the in-situ I2-doped PANI film fabricated by the proposed AP plasma reactor exhibits excellent electrical resistance without electrical aging behavior. The developed AP plasma reactor proposed in this study is more advantageous for the polymerization and in-situ I2 doping of conductive polymer films than the existing AP plasma reactor with a dielectric barrier.
Highlights
Plasma polymerization is a methodology for synthesizing polymeric composites with high crosslinking density from reactive monomer vapors generated via gaseous or solution plasma processes [1,2,3,4,5,6,7]
In the typical atmospheric pressure plasma jet (APPJ) configuration, the discharge gas flows through a tube and a high voltaIgnetihseatpyppliiceadl tAoPaPnJecloenctfirgoudreactoionnn,etchteedditsochthaergtuebgeasfoflroewlescttrhicroalubgrheaaktduobwe nan[d51a–5h5ig].h vTohletangeewislyadpepvlieelodpteodaAnPelpelcatsrmodaerceoacntnoercitsebdatsoedthoenttuhbisecfoonrfeigleucrtaritcioanl barnedakcodnoswisnts[o5f1–th5e5]
PANI films without electrical aging behavior will become increasingly promising for detecting layers for specific molecular species, including various gaseous molecules, ethanol, tive polymer film obtained by generating glow discharge using a single electrode structure without a counter electrode indicates that the polymer films can be stably deposited onto Si substrates, and glass and flexible plastic substrates
Summary
Plasma polymerization is a methodology for synthesizing polymeric composites with high crosslinking density from reactive monomer vapors generated via gaseous or solution plasma processes [1,2,3,4,5,6,7]. Due to the advantages of low cost and process simplicity, many studies have described the ex-situ I2 doping process in which the doping step is performed after the synthesis of the polymer film [38,39,40,41] This approach still has the major drawback that the corresponding electrical resistance is initially quite high and continues to increase with time. The present research group introduced an in-situ I2 doping method in which a flow of monomer vapor was supplied and I2 was sublimated simultaneously during AP plasma polymerization in order to fabricate polymer films with good conducting properties [17]. The PANI film is deposited onto an interdigitated electrode (IDE) substrate via the in-situ doping technique, and the elec3torifc1a4l resistance is measured using a two-probe method in order to determine the suitability of the obtained film for use as the detecting layer in a gas sensor. The gas flow becomes evenly distributed in the center of the wide4tuofb1e4 and is retained in the polymerization reaction region for a longer time
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