Abstract
The semiconductor properties and protective role of a single-component Cu2O layer were studied using cyclic voltammetry, Mott–Schottky (MS) tests, electrochemical impedance spectroscopy (EIS), in-situ laser Raman spectroscopy, and electrochemical atomic force microscopy techniques (ECAFM). The results suggest that the single-component Cu2O layer exhibits p-type semiconductor properties. An interesting phenomenon was observed; the carrier concentration, and the diffusivity of the Cu+ vacancies increased progressively as the oxide layer formation potential increased. The oxide layer was composed of granular cuprous oxide; relatively large Cu2O particles were formed on the surface under −120mV (Ag/AgCl) and −60mV (Ag/AgCl). At a film formation potential of −120mV (Ag/AgCl), the thickness of the oxide layer (Cu2O) was approximately 6.046nm, while it was 0.5594nm at 0mV (Ag/AgCl). The Cu2O layer formed at a lower potential offers superior stability and protection.
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