Abstract
Infrared Fourier transform phase-modulated ellipsometry (FTPME) has been used as an in situ probe to study the structural and vibrational properties of thin films. To illustrate the performance of this technique, in situ (Ψ, Δ) measurements have been obtained during the growth of different types of hydrogenated amorphous carbon (a-C:H) films deposited from plasmas onto crystalline silicon (c-Si). The refractive index and thickness of the films have been determined through (Ψ, Δ) analysis over the CH n stretching region. Within this vibrational range, the chemical nature of the bonds formed during the growth can be identified. The role of ion bombardment and interlayer formation, which are both of crucial importance in a-C:H film properties, have been studied under soft plasma conditions. Through studies of the C–H vibrational intensity, a microstructure model can be given for a-C:H deposited at low ion bombardment.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
