Abstract
Results are presented of an in-situ high voltage electron microscopy study of surface damage induced dislocation generation and propagation in silicon samples with a periodic mechanical stress field at the surface. The experimental observations are interpreted in the frame of a theoretical model describing dislocation nucleation as a function of substrate and stress field orientation. It is shown that in-situ studies of dislocation generation can elucidate basic mechanisms of defect formation in integrated circuit structures.
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