Abstract
Construction of 2D heterostructure is a potential strategy to improve the sensing performance of 2D layered materials owing to the high-quality of heterointerfaces. This attributed to the remarkable electronic band alignment between the constituent materials and their distinctive characteristics. Woefully, very limited attempts have been taken to investigate the effect of 2D heterointerface for gas sensing applications. Here, the SnS2/SnS heterostructure is fabricated on a SiO2/Si substrate using a single-step atmospheric chemical vapor deposition technique for room temperature NO2 sensing. The heterostructure has imparted a 1.3 times enhancement in response (S(%)), with ultra-fast response (τres) and recovery time (τrec) of 32 s and 382 s, towards 40 ppm of NO2 at 30 °C. Moreover, the impact of humidity on the sensing performance of SnS2/SnS has also been studied, confirming its negligible effect on relative humidity. Additionally, it also demonstrates a remarkable stability of 93% over a period of 40 days. Besides, due to strong adsorption energy of SnS2 (1914 meV) and SnS (600 meV) towards NO2 endorses the reaction kinetic parameters validated by the gas adsorption/desorption isotherm analysis of heterostructure. The substantial interface contacts between the SnS2/SnS heterostructure facilities the fermi-level mediated charge transfer, contributing significantly towards the improvement in sensing performance. Therefore, the formation of hierarchical 2D heterostructure with electron depletion layer can be considered as a conducive way for the future development low-powered gas sensor.
Published Version
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