Abstract
The potential of realizing quantum box structures via in-situ molecular beam epitaxical growth on the (111)B face of GaAs is explored. Growth is carried out on patterned (111)3B substrates with an array of truncated triangular pyramidal mesas. The mesa tops with arbitrarily small areal dimensions are used as templates for quantum box realization. Under appropriate conditions of growth along with the attendant interfacet migration, a mesa top growth profile characterized by monotonically shrinking lateral dimensions resulting in 'pinch-off is achieved.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
