Abstract
The growth of oriented crystalline PZT films on (111) Si substrates at different substrate temperatures is reported. By varying the laser fluence and other deposition parameters we have been able to produce, in a single-step process, highly oriented PZT films with good piezoelectric properties at much lower temperatures than reported in other PLD experiments. X-ray measurements and secondary ion mass spectroscopy, as well as piezoelectric measurements, are used to characterize the different samples. Experimental evidence is presented that at high laser fluence (25 J/cm 2) better properties for PLD films are obtained with lower substrate temperatures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
