Abstract
The local structure around gallium of 0.5, 1 and 5 at.% in liquid silicon at 1440° C has been investigated by the extended X-ray absorption fine structure (EXAFS). The amplitude of EXAFS oscillations is distinct for the very dilute case of 0.5 at.% gallium. The EXAFS analysis shows that the structural parameters of Ga–Si pairs change from 2.8 atoms at a distance of 2.36 Å to 2.1 atoms at a distance of 2.43 Å with increasing gallium content in liquid silicon. These results suggest that a certain local structure around gallium in liquid silicon is formed at low gallium content and that this structural feature disappears with increasing gallium content.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
