Abstract
In situ transmission electron microscopy experiments on electromigration in Al(0.5%Cu)/TiN interconnects show that the TiN barrier layer improves reliability not only by acting as a shunting layer, but also by dramatically influencing electromigration behavior within the Al(Cu) interlayer. One highlight of these experiments is a complete absence of void migration in such lines, as opposed to Al(Cu) lines on SiO2 without barrier layer [Al(Cu)/SiO2]. This remarkable immobility of voids in Al(Cu)/TiN lines has a profound impact on failure mechanisms, lifetimes, and reliability of interconnects. The TiN barrier layer also dramatically effects void nucleation and growth.
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