Abstract
Electrical and structural properties of GaSb metal-oxide-semiconductor capacitors with in-situ deposited HfO2 gate dielectric and in-situ deposited amorphous silicon interface passivation layer are presented. Capacitance-voltage characteristics with low C-V stretch out, reduced hysteresis, lower EOT is obtained in a temperature range of 3500C-5500C post deposition annealing in forming gas. The gate leakage current of the gate stack was ≤ 1μA/cm2. p-MOSFETs fabricated on epitaxially grown strained (In)GaSb quantum channel (ε=1.6%) channels using this all in-situ high-k gate stack showed a maximum ION=23mA/mm for a 3μm gate length device
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