Abstract
Thin unsupported a-Ge films were crystallized in situ in a transmission electron microscope under nanosecond pulsed laser irradiation. The observed features show that at the crystallization threshold the phase transition is an explosive solid state crystallization. Evidence for intermediate melting during the laser pulse is given for higher energy density irradiation only. An approximate estimation of the upper limit of the temperature in the layers during the pulse shows, in agreement with the above observations, that at the crystallization threshold the melting point is far from being reached.
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