In situ crystallization kinetics studies of plasma-deposited, hydrogenated amorphous silicon layers

Abstract

The impact of the amorphous silicon properties, i.e., the microstructure parameter R* and the medium range order (MRO), on the crystallization process is highlighted and discussed. In agreement with literature, the development of large grains extending through the thickness of the poly-Si layer is found to be promoted by an increase in the amorphous silicon microstructure parameter, R*. Furthermore, while the role of the MRO in controlling the incubation time and, therefore, the onset in crystallization is generally acknowledged, it is also concluded that the presence of nano-sized voids plays an essential role in the crystallization kinetics.