Abstract
We describe an attempt to perform the UV/ozone cleaning step for silicon wafers within the ultrahigh vacuum system. By introducing the UV/ozone cleaning into the load lock of the MBE equipment we avoid the contact of the normally ex situ UV/ozone precleaned substrate to air. In addition we gain a further degree of freedom, namely the oxygen partial pressure. The influence of that pressure on removing carbon-containing contaminations and on the properties of the in situ formed thin oxide layer is investigated by X-ray photoelectron spectroscopy (XPS) without breaking the vacuum.
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