Abstract
Transport properties of (Cu,C)Ba2CuOx [(Cu,C)-1201] thin films have been characterized by in situ temperature dependence of resistivity, without breaking vacuum from the deposition to the measurement. In in situ transport properties measurements, the obtained results reveal that (Cu,C)Ba2CuOx films exhibit Tc>20K on the cased of conductivity at 290K (σ[290K])>4×102S/cm and temperature coefficient of resistivity (TCR)>1.5×10−3K−1, and doping level of them should be in between under-doped and optimally-doped states. Their results suggest that there would be possible to further increases of Tc, and XPS data suggest that (Cu,C)-system should have the excellent dopability in their charge reservoir and the possibility of low anisotropy.
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