Abstract
We have used in situ grazing incidence x-ray scattering to probe the near atmospheric pressure (100 Torr) OMVPE growth of ZnSe on GaAs. For the first time, we have directly observed the establishment of a clean GaAs surface in a hydrogen ambient with a characteristic (2×4) reconstruction and followed the development of the ZnSe epitaxial film during the initial stages of growth. Our results indicate the presence of a very stable and well-ordered p(2×1) reconstruction during growth, despite the presence of the ambient carrier gas and organic reaction by-products. In addition, by observing the changes in X-ray reflectivity due to the introduction of source compounds, we have also been able to investigate kinetic effects during alternating source growth.
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