Abstract
The initial growth of HfO2 on Si (111) is monitored in situ by ultrahigh vacuum (UHV) scanning probe microscopy. UHV scanning tunneling microscopy and UHV atomic force microscopy reveal the topography of HfO2 films in the initial stage. The chemical composition is further confirmed by x-ray photoelectron spectroscopy. Scanning tunneling spectroscopy is utilized to inspect the evolution of the bandgap. When the film thickness is less than 0.6 nm, the bandgap of HfO2 is not completely formed. A continuous usable HfO2 film with thickness of about 1.2 nm is presented in this work.
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