In situ boron incorporation and activation in silicon carbide using excimer laser recrystallization

Abstract

In situ incorporation and activation of boron into silicon carbide is demonstrated using excimer laser recrystallization in a boron trifluoride ambient. Rutherford backscattering spectroscopy and x-ray analysis demonstrate that there is no crystalline damage during recrystallization at laser fluences below ∼1.4 J/cm2. Point-contact current–voltage measurements confirm dopant activation, and the formation of shallow (∼90 nm) pn junctions in silicon carbide. This technique may be applied to the fabrication of shallow junctions and low resistance contacts in silicon carbide power devices without ion implantation and furnace annealing.