Abstract
Silicon Carbide (SiC) is believed to be a revolutionary semiconductor material for power devices of the future; many SiC power devices have emerged as superior alternative power switch technology, especially in harsh environments with high temperature or high electric field. In this chapter, the challenges and recent develop‐ ments of SiC power devices are discussed. The first part is focused on SiC power diodes including SiC Schottky barrier diode (SBD), SiC PiN diodes (PiN,) SiC junction/ Schottky diodes (JBS), then SiC UMOSFETs, DMOSFETs and several MESFETs are introduced, and the third part is about SiC bipolar devices such as BJT and IGBT. Finally, the challenges during the development of SiC power devices, especially about its material growth and packaging are discussed.
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