Abstract
In situ monitoring of InP atomic layer epitaxy (ALE) by surface photoabsorption (SPA) was performed in low-pressure metal organic chemical vapor deposition. Self-limiting adsorption condition of In species was studied for various TMIn injection times. A grazing incidence X-ray study on the thickness of the film grown by ALE, however, showed that the growth rate did not reach one monolayer (ML)/cycle. The SPA signal trace measured during the InP ALE indicated incomplete PH 3 decomposition on the methyl-terminated In surface, and this observation was attributed to the cause of submonolayer growth. We also report a spectroscopic SPA study on the surface state during a cycle of ALE process. The SPA spectrum of the methyl-terminated In surface showed a different line shape at around 1.9 eV (In-dimer region) from that of an In-stabilized surface. But, during H 2 purge at 390°C, this portion of the spectrum was observed to evolve to that of an In-stabilized surface by the desorption of methyl radical.
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