Abstract
This paper describes the electrical properties of poly (polycrystalline) 3C-SiC thin films with different nitrogen doping concentrations. In-situ doped poly 3C-SiC thin films were deposited by APCVD at <TEX>$1200^{\circ}C$</TEX> using HMDS (hexamethyildisilane: <TEX>$Si_2(CH_3)_6)$</TEX>) as Si and C precursor, and <TEX>$0{\sim}100$</TEX> sccm <TEX>$N_2$</TEX> as the dopant source gas. The peak of SiC is appeared in poly 3C-SiC thin films grown on <TEX>$SiO_2/Si$</TEX> substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of poly 3C-SiC thin films decreased from <TEX>$8.35{\Omega}{\cdot}cm$</TEX> with <TEX>$N_2$</TEX> of 0 sccm to <TEX>$0.014{\Omega}{\cdot}cm$</TEX> with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from <TEX>$3.0819{\times}10^{17}$</TEX> to <TEX>$2.2994{\times}10^{19}cm^{-3}$</TEX> and their electronic mobilities increased from 2.433 to <TEX>$29.299cm^2/V{\cdot}S$</TEX>, respectively.
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