H2 carrier gas dependence of Young's modulus and hardness of chemical vapor deposited polycrystalline 3C-SiC thin films

Abstract

This paper presents the mechanical properties of poly (polycrystalline) 3C-SiC thin films according to 0%, 7%, and 10% carrier gas (H2) concentrations using nano-indentation. When H2 concentration was 10%, it has been proved that the mechanical properties, Young's modulus, and hardness of poly 3C-SiC films are the best of them. In the case of 10% H2 concentration, Young's Modulus and hardness were obtained as 367 and 36GPa, respectively. The surface roughness according to H2 concentrations was investigated by AFM (atomic force microscope). When H2 concentration was 10%, the roughness of 3C-SiC thins was 9.92nm, which is also the best of them. Therefore, in order to apply poly 3C-SiC thin films to MEMS (micro-electromechanical system) applications, H2 concentration's rate should increase to obtain better mechanical properties and surface roughness.