Abstract
This paper describes the mechanical properties of poly (Polycrystalline) 3C-SiC thin films with <TEX>$N_2$</TEX> in-situ doping. In this work, the poly 3C-SiC film was deposited by APCVD (Atmospheric Pressure Chemical Vapor Deposition) method using single-precursor HMDS (Hexamethyildisilane: <TEX>$Si_2(CH_3)_6)$</TEX> at <TEX>$1200^{\circ}C$</TEX>. The mechanical properties of doped poly 3C-SiC thin films were measured by nono-indentation according to the various <TEX>$N_2$</TEX> flow rate. In the case of 0 sccm <TEX>$N_2$</TEX> flow rate, Young's Modulus and hardness were obtained as 285 GPa and 35 GPa, respectively. Young's Modulus and hardness were decreased according to increase of <TEX>$N_2$</TEX> flow rate. The crystallinity and surface roughness was also measured by XRD (X-Ray Diffraction) and AFM (Atomic Force Microscopy), respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of the Korean Institute of Electrical and Electronic Material Engineers
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
