Abstract
The effect of various Sb-terminated GaAs(001) templates on the growth of InAs was investigated by varying the As flux. The growth of InAs under In-rich growth conditions on Sb-terminated GaAs(001)-(2×3), (2×4) and (2×8) templates was demonstrated to occur in the Stranski-Krastanov (SK) growth mode, in contrast to the Sb-free case, where the growth process follows the Franck-van der Merwe (FM) growth mechanism. The observed antimony dependent change of growth mode from FM to SK is qualitatively explained by the decrease of the surface energy of the growing InAs layer caused by the segregation of Sb on the surface of the InAs(001).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
