Abstract
The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO3 thin films. Theoretical calculations predict the key role of the BaTiO3/PrScO3{({{{{{boldsymbol{110}}}}}})}_{{{{{{bf{O}}}}}}} substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.
Highlights
The control of the in-plane domain evolution in ferroelectric thin films is critical to understanding ferroelectric phenomena and to enabling functional device fabrication
LaAlO3 and SrTiO3 are both electrical insulators, but when they are grown on top of each other, highly conducting channels are formed at the interface[1], accompanying ferromagnetism[2,3,4,5] and gate-tunable superconductivity[6,7]
We report the strategy for in-plane single-domain in BaTiO3 (BTO) ferroelectric thin films via interfacial symmetry and electrostatic potential mismatch using ð110ÞO-oriented PrScO3 (PSO) substrates
Summary
The control of the in-plane domain evolution in ferroelectric thin films is critical to understanding ferroelectric phenomena and to enabling functional device fabrication. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices. Single-domain in-plane polarized states are highly desirable for a number of potential functional device applications, such as high-performance electro-optic modulators[9] and planar-type ferroelectric tunnel junctions[10]. We report the strategy for in-plane single-domain in BaTiO3 (BTO) ferroelectric thin films via interfacial symmetry and electrostatic potential mismatch using ð110ÞO-oriented PrScO3 (PSO) substrates. Density functional theory calculations and phase-field simulations predict the key roles of the interfacial environment between a film and the substrate, i.e., anisotropic strain, monoclinic distortion, and interfacial electrostatic potential, in stabilizing in-plane single-domain in BTO films on PrScO3 (PSO) ð110ÞO substrates. This work offers an approach to engineer in-plane ferroelectric epitaxial oxide thin films, enabling the development of device applications
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