Abstract
We characterized in-plane magnetic and electrical properties of MnAs/InAs/GaAs(111)B hybrid structure grown by molecular beam epitaxy (MBE). We observed isotropic easy magnetization in two crystallographic in-plane directions, [2̅110] and [01̅10] of hexagonal MnAs i.e. [1̅10] and [112̅] of cubic InAs. We also fabricated transmission line model (TLM) devices, and observed almost isotropic electrical properties in two crystallographic in-plane directions, [1̅10] and [112̅] of cubic InAs. Also we tried to fabricate and characterize lateral spin-valve (LSV) devices from the hybrid structure. We could roughly estimate the spin injection efficiency and the spin diffusion length at room temperature in [112̅] direction. We believe that the hybrid structures are helpful to design spintronic device with good flexibility in-plane.
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