Abstract
(In1−xErx)2O3 ternary alloys are grown on A‐plane sapphire wafers by plasma‐assisted molecular beam epitaxy. The layers crystallize in the cubic bixbyite structure with axis aligned parallel to the substrate normal. The d‐spacing of the {111} lattice planes linearly increases with increasing the Er molar fraction in accordance with Vegard's law. Incorporation of Er in the In2O3 matrix is accompanied by the widening of the optical gap and linear increase of the peak absorption coefficient reaching 380 cm−1 at the telecommunication wavelength of 1.54 µm. The samples exhibit Er3+‐related emission at indirect excitation via the crystalline host at room temperature.
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