In depth characterization of electron transport in 14 nm FD-SOI CMOS devices

Abstract

In this paper, carrier transport properties in highly scaled (down to 14nm-node) FDSOI CMOS devices are presented from 77K to 300K. At first, we analyzed electron transport characteristics in terms of different gate-oxide stack in NMOS long devices. So, we found that SOP and RCS can be the dominant contribution of additional mobility scatterings in different temperature regions. Then, electron mobility degradation in short channel devices was deeply investigated. It can be stemmed from additional scattering mechanisms, which were attributed to process-induced defects near source and drain. Finally, we found that mobility enhancement by replacing Si to SiGe channel in PMOS devices was validated and this feature was not effective anymore in sub-100nm devices. The critical lengths were around 50nm and 100nm for NMOS and PMOS devices, respectively.