Abstract
Formation mechanism of buried oxide in silicon wafers during the annealing process after oxygen implantation has been investigated by using Fourier-transform infrared absorption spectroscopy and secondary ion mass spectrometry. The implanted Si wafers were annealed at a different temperature, for a different time, and in a different atmosphere. We found that the implanted oxygen density decreased by the out-diffusion after a very short time at an elevated temperature. We also found that the in-diffusion of oxygen took place after a long time at the same temperature. The in- and out-diffusion behaviors clearly depended on the annealing atmosphere. This can be explained by taking account that the equilibrium surface concentration of oxygen differs between the annealing atmospheres.
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