Abstract
The out-diffusion of oxygen in Czochralski grown silicon (100) wafers annealed at high temperature under a hydrogen or an argon ambient has been investigated by secondary ion mass spectrometry (SIMS). The wafers were annealed with three successive process: loading of wafers into furnace at 850 °C then ramping up, annealing at 1200 °C for 1 h, and ramping down from 1200 to 850 °C. It was found that oxygen diffusivities obtained from the above two kinds of samples showed almost the same values. Also, no difference in the oxygen concentration of the subsurface region in Si was observed between the above two kinds of samples within SIMS detection limit of 2×1016 atoms/cm3. The result indicates that there is no significant difference in oxygen diffusivity between the two annealing ambients of hydrogen and argon gases.
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