Abstract
The quaternary indium aluminum tin oxide (IATO) films with high Hall mobility have been prepared on the α-Al2O3 (0001) substrates by metal-organic chemical vapor deposition (MOCVD). The structure of the films varied from amorphous or microcrystalline to well crystalline and then to mixed amorphous and crystalline as the Sn content increased. The highest Hall mobility of 15.47cm2V−1s−1 with a carrier concentration of 2.1×1020cm−3 and a resistivity of 2.13×10−3Ωcm were obtained for the sample with Sn content of 15%. The average transmittances for the IATO films in the visible range exceeded 81% and the optical band gap of the films decreased monotonically from 5.15 to 4.05eV with the increasing Sn content.
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